BU2520AX DATASHEET PDF

isc website: 1 isc Silicon NPN Power Transistor. BUAX. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAX BUAX; Silicon Diffused Power Transistor;; Package: SOT ( TOP-3D). Details, datasheet, quote on part number: BUAX. BUAX datasheet, BUAX circuit, BUAX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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BUAX_PDF Datasheet Download IC-ON-LINE

Switching dafasheet test circuit. Oscilloscope display for VCEOsust. September 6 Rev 2. Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

Switching times waveforms 16 kHz. Typical collector storage and fall time.

Refer to mounting instructions for F-pack envelopes. Click here to Download. Typical collector-emitter saturation voltage. September 7 Rev 2.

BUAX 데이터시트(PDF) – Inchange Semiconductor Company Limited

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. September 8 Rev 2.

How long will receive a response. Test circuit for VCEOsust. September 3 Rev 2.

SOT; The seating plane is electrically isolated from all terminals. September 1 Rev 2. Forward bias safe operating area. No liability will be accepted by the publisher for any consequence of its use.

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Product specification This data sheet contains final product specifications. Switching times waveforms 32 kHz. The information presented in this document does not form part of any quotation or contract, bu252ax is believed to be accurate and reliable and may be changed without notice.

BU2520AX – Silicon Diffused Power Transistor

Philips customers using or selling these products for use in such applications do dahasheet at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Application information Where application information is given, it is advisory and does not form part of the specification. New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large datasgeet colour television receivers up to 32 kHz.

New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

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September 2 Rev 2. Cfb -VBB t Fig. UNIT – – 1. Collector to emitter voltage Collector to emitter voltage open base Collector current DC Collector datasgeet peak value Base current DC Base current peak value Reverse base current Reverse base current peak value1 Total power dissipation Storage temperature Junction temperature.

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Stress above one or more of the limiting values may cause permanent damage to the device. Want to post a buying lead? Exposure to limiting values for extended periods may affect device reliability.

Typical base-emitter saturation voltage. New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Typical DC current gain. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Mounted with heatsink compound.